MF009500 - SEMI MF95 - Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer StdPbc-0998 This Standard covers physical interface

This Standard covers physical interface of 300 mm AMHS interbay equipment only

orgで，そして2009年11月にCD-ROMで入手可能となる。初版は1988年月発行，前版は2001年11月に発行された。

Referenced SEMI StandardsSEMI M1 — Specifications for Polished Single Crystal Silicon Wafers

SEMI G86-0217 (Reapproved 1122)

MF009500 - SEMI MF95 - Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer StdPbc-0998 This Standard covers physical interfaceThis Test Method is a manual technique that requires the use of a dispersive infrared spectrophotometer. For this measurement, the resistivity of the substrate must be less than 0. 02 cm at 23C and the resistivity of the layer must be greater than 0. 1 cm at 23C. A brief description of the theory of this Test Method is given in Related Information 1. This technique is capable of measuring the thickness of both n and p type layers greater than 2 m